Phys. Rev. B 48, 11431–11434 (1993)Semimetal-to-semiconductor transition in bismuth thin filmsReceived 17 June 1993; published in the issue dated 15 October 1993 Field- and temperature-dependent magnetotransport measurements on Bi layers grown by molecular-beam epitaxy have been analyzed by mixed-conduction techniques. In the thin-film limit, the net hole density scales inversely with layer thickness while the mobility scales linearly. By studying the minority electron concentration as a function of temperature in the range 100–300 K, we have unambiguously confirmed the long-standing theoretical prediction that quantum confinement should convert Bi from a semimetal to a semiconductor at a critical thickness on the order of 300 Å. © 1993 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.11431
DOI:
10.1103/PhysRevB.48.11431
PACS:
73.50.Gr, 68.55.Bd, 73.20.Dx, 72.80.Cw
See AlsoComment: H. T. Chu, Comment on ‘‘Semimetal-to-semiconductor transition in bismuth thin films’’, Phys. Rev. B 51, 5532 (1995). Reply: C. A. Hoffman, J. R. Meyer, F. J. Bartoli, A. Di Venere, X. J. Yi, C. L. Hou, H. C. Wang, J. B. Ketterson, and G. K. Wong, Reply to ‘‘Comment on ‘Semimetal-to-semiconductor transition in bismuth thin films’ ’’, Phys. Rev. B 51, 5535 (1995). |
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