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Phys. Rev. B 48, 11416–11419 (1993)

Scaling in spin-degenerate Landau levels in the integer quantum Hall effect

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S. W. Hwang, H. P. Wei, L. W. Engel, and D. C. Tsui
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

A. M. M. Pruisken
Institute for Theoretical Physics, University of Amsterdam, Amsterdam, The Netherlands

Received 26 April 1993; published in the issue dated 15 October 1993

In a low-mobility InxGa1-xAs/InP heterostructure, we find that the quantized Hall resistance plateau, ρxy=h/ie2 with i=3, starts developing only when T is below 50 mK. For higher T, the plateau and the associated minimum in the diagonal resistivity ρxx can be made to appear by tilting the sample with respect to the B field. We have studied the T dependence of the ρxx minimum and deduced the thermal-activation energy (Δ). We find that Δ is 67 times smaller than the Landau-level broadening deduced from the electron mobility. This result implies that there is no gap in the density of states and that, for T>50 mK, the Landau level is spin degenerate. In this higher T range, we observe a T-0.21 power law for the maximum value of dρxy/dB between the i=2 and 4 plateaus, and T-0.42 for the minimum value of d2ρxx/dB2. These exponents are a factor 2 smaller than those for spin-polarized levels.

© 1993 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.48.11416
DOI:
10.1103/PhysRevB.48.11416
PACS:
73.40.Hm, 73.50.Jt, 73.61.Ey