Phys. Rev. B 47, 8337–8340 (1993)New high-pressure phase of Si
Angle-dispersive powder-diffraction techniques utilizing an image-plate area detector have been used to reexamine the high-pressure behavior of silicon to ∼18 GPa. We have observed a new intermediate body-centered orthorhombic structure between the well-known Si II (β-tin) and Si V (simple-hexagonal) structures. The existence of such a phase has been considered previously in energy calculations, and may pertain to the observed pressure dependence of the superconducting transition temperature of Si in the 13–18 GPa range. © 1993 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.47.8337
DOI:
10.1103/PhysRevB.47.8337
PACS:
61.50.Ks, 62.50.+p
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