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APS » Journals » Phys. Rev. B » Volume 47 » Issue 11
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Phys. Rev. B 47, 6585–6589 (1993)

Barrier localization effects in AlxGa1-xAs-AlyGa1-yAs superlattices

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Lok C. Lew Yan Voon
Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609

L. R. Ram-Mohan
Department of Physics and Department of Electrical Engineering, Worcester Polytechnic Institute, Worcester, Massachusetts 01609
Naval Research Laboratory, 4555 Overlook Drive, Washington, D.C. 20375-5000

H. Luo and J. K. Furdyna
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

Received 3 September 1992; published in the issue dated 15 March 1993

We demonstrate that the recently observed phenomenon of barrier localization in magnetic II-VI superlattices is also present in III-V superlattices. We investigate the role of subsidiary minima and show that above-barrier localization in both the Γ and X barriers occurs for type-I and type-II (001) superlattices in the AlxGa1-xAs-AlyGa1-yAs system. In addition, explicit evaluation of the oscillator strengths shows that the interband transitions involving the X-like conduction-band above-barrier states remain weak even though these are spatially direct.

© 1993 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.47.6585
DOI:
10.1103/PhysRevB.47.6585
PACS:
73.20.Dx, 78.66.Fd
 
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