corner
corner
APS » Journals » Phys. Rev. B » Volume 46 » Issue 3
< Previous Article | Next Article >

Phys. Rev. B 46, 1886–1888 (1992)

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

Download: PDF (130 kB) Buy this article Export: BibTeX or EndNote (RIS)

Gérald Arnaud, Philippe Boring, and Bernard Gil
Groupe d’Etudes des Semiconducteurs, Université de Montpellier II, Case courrier 074, 34095 Montpellier CEDEX 5, France

Jean-Charles Garcia and Jean-Pierre Landesman
Laboratoire Central de Recherches, Domaine de Corbeville, Thomson-CSF, 91404 Orsay CEDEX, France

Mathieu Leroux
Laboratoire de Physique des Solides et Energie Solaire, Centre National de la Recherche Scientifique, rue Bernard Gregory, Sophia, Antipolis, 06560 Valbonne, France

Received 20 April 1992; published in the issue dated 15 July 1992

This work reports on growth, characterization, and calculation of the electronic structure of GaAs-(Ga,In)P quantum wells, where the two semiconductors share neither a common anion nor a common cation. Metal organic molecular-beam epitaxy was the growth method that we used. The composition of the disordered alloy was close to 50 at. % indium. We have determined the valence-band offset in such structures. We have found ΔEc/ΔEv=0.4, and have calculated the influence of the spin-orbit split-off states on the light-hole confinement. We found that these deep valence states significantly reduce the light-hole confinement.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.46.1886
DOI:
10.1103/PhysRevB.46.1886
PACS:
73.20.Dx, 73.40.Kp, 78.65.-s
 
< Previous Article | Next Article >