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Phys. Rev. B 46, 14889–14892 (1992)

Conductance of two-dimensional disordered Voronoi networks

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A. Priolo
Facolta di Scienze, Universita di Catania, 95128 Catania, Italy

H. M. Jaeger
The James Franck Institute and Department of Physics, The University of Chicago, Chicago, Illinois 60637
Delft Institute for Microelectronics Submicron Technology, Delft University of Technology, 2628 CJ Delft, The Netherlands

A. J. Dammers
Research Institute for Materials, University of Nijmegen, 6525 ED Nijmegen, The Netherlands
Delft Institute for Microelectronics and Submicron Technology, Delft University of Technology, 2628 CJ Delft, The Netherlands

S. Radelaar
Delft Institute for Microelectronics and Submicron Technology, Delft University of Technology, 2628 CJ Delft, The Netherlands

Received 17 April 1992; published in the issue dated 1 December 1992

Resistor networks constructed from Voronoi polygons are models for transport by diffusive motion across local interfaces where both the interface strength and the local coordination number can be distributed. Computer simulations were performed on a series of two-dimensional networks with increasing degree of disorder, starting from a regular lattice. We find nonmonotonic behavior of the overall network conductance as a function of disorder. The observed increase of network conductance G as the random lattice is approached shows the importance of taking local topology variations into account in the description of disordered media. We discuss a general and simple way to estimate G from a particular, network-specific percentile of the distribution of local conductances.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.46.14889
DOI:
10.1103/PhysRevB.46.14889
PACS:
73.50.Yg, 74.75.+t
 
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