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Phys. Rev. B 46, 13394–13399 (1992)

Optically detected cyclotron resonance of GaAs quantum wells: Effective-mass measurements and offset effects

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R. J. Warburton, J. G. Michels, and R. J. Nicholas
Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom

J. J. Harris
Semiconductor Interdisciplinary Research Centre, Imperial College of Science and Technology, Blackett Laboratory, Prince Consort Road, London, United Kingdom

C. T. Foxon
Physics Department, Nottingham University, Nottingham, United Kingdom

Received 16 July 1992; published in the issue dated 15 November 1992

We have detected cyclotron resonance in a series of undoped GaAs quantum wells by modulating the photoluminescence intensity with far-infrared radiation. The conduction-band mass was measured for different quantum-well widths, and good agreement with a simple formula based on kp theory is achieved. An offset was observed in the cyclotron-resonance energy, strongly dependent on well width. The interpretation is that monolayer-width fluctuations localize the carriers, giving an additional binding energy to the cyclotron-resonance transition.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.46.13394
DOI:
10.1103/PhysRevB.46.13394
PACS:
71.25.Jd, 76.40.+b, 78.55.-m