Phys. Rev. B 45, 3886–3889 (1992)Ultrafast relaxation of photoexcited holes in n-doped III-V compounds studied by femtosecond luminescence
We present time-resolved measurements of the relaxation of photoexcited holes in n-doped GaAs and InP with 100 fs time resolution. The band-edge luminescence is predominantly controlled by the hole dynamics, when the optical excitation density is much lower than the doping density. Information on the electron-hole scattering and hole-phonon scattering rates is obtained by varying the doping density. Thermal equilibrium between hot holes and lattice is found to be established on a subpicosecond time scale. © 1992 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.45.3886
DOI:
10.1103/PhysRevB.45.3886
PACS:
72.10.Di, 78.47.+p, 78.55.Cr
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.