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Phys. Rev. B 45, 2593–2596 (1992)

Rare-earth valence and doping in T-, T-, and T*-phase R2CuO4 (R=rare earths)

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Zhengquan Tan and S. M. Heald
Brookhaven National Laboratory, Upton, New York 11973

S-W. Cheong and A. S. Cooper
AT&T Bell Laboratories, Murray Hill, New Jersey 07974

J. I. Budnick
Department of Physics, University of Connecticut, Storrs, Connecticut 06269-3046

Received 5 September 1991; published in the issue dated 1 February 1992

Charge-carrier doping strongly affects the magnetic, transport, and superconducting properties of the T-, T-, and T*-phase R2CuO4 compounds (R=rare earths). The nature of doping and doping level depend not only on the heterovalent cation substitution and oxygen stoichiometry but also on the rare-earth valence. We have studied the valence of various rare earths in the R2CuO4 materials using x-ray-absorption spectroscopy. We found that Ce is tetravalent in both T-phase Nd2-xCexCuO4 and T*-phase Pr2-x-yCexSryCuO4. Pr is trivalent in the T and T structures. In the T* structure, both Pr and Tb have an average valence greater than 3+, very likely arising from an inhomogeneous mixture of trivalent and tetravalent ions, and the latter reside at the eightfold-oxygen-coordinated position. Other rare earths are trivalent in the T, T, and T* phases.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.45.2593
DOI:
10.1103/PhysRevB.45.2593
PACS:
74.70.Vy, 78.70.Dm