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Phys. Rev. B 45, 1488–1491 (1992)

Relationship between resistance, localization length, and inelastic-scattering length

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Y. B. Band
Department of Chemistry, Ben-Gurion University, Beer Sheva, Israel

H. U. Baranger
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974

Y. Avishai
Service de Physique Theorique, Centre d’Etudes Nucléaires Saclay, F91191 Gif-sur-Yvette, France
Department of Physics, Ben-Gurion University, Beer Sheva, Israel

Received 4 November 1991; published in the issue dated 15 January 1992

An integral equation for the average resistance of a wire sample of length L, R(L), is obtained in terms of the probability density function for inelastic scattering and the average quantum resistance due to elastic scattering within the sample. This equation yields the average sample resistance as a function of the sample length L, the electron localization length ξ, and the inelastic-scattering length scrl(T), which depends on temperature. For the metallic regime, L>ξ>scrl(T), and the insulating regime, L>scrl(T)>ξ, analytic expressions for the average resistivity ρ(T) in terms of ξ and scrl(T) are obtained. Our approach allows a unified treatment of both regimes. The relationship of the present results to those of Abrahams et al. and Thouless on the conductance of thin wires is discussed.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.45.1488
DOI:
10.1103/PhysRevB.45.1488
PACS:
72.20.My, 73.20.Dx, 73.50.Jt