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APS » Journals » Phys. Rev. B » Volume 45 » Issue 16
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Phys. Rev. B 45, 9428–9431 (1992)

Photoluminescence from AlxGa1-xAs/GaAs quantum wells quenched by intense far-infrared radiation

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S. M. Quinlan, A. Nikroo, and M. S. Sherwin
Department of Physics, University of California, Santa Barbara, California 93106
Center for Free-Electron Laser Studies, University of California, Santa Barbara, California 93106

M. Sundaram and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106

Received 26 December 1991; published in the issue dated 15 April 1992

We present an experimental study of the effects of intense far-infrared (FIR) radiation on the excitonic photoluminescence (PL) from AlxGa1-xAs/GaAs quantum wells. The FIR electric field was polarized parallel to the plane of undoped, 100-Å-wide Al0.3Ga0.7As/GaAs wells. Electron-hole pairs, created by relatively weak visible pulses, were excited by FIR pulses with intensities of up to 70 kW/cm2 at frequencies of 29.5 and 43.3 cm-1 (3.7 and 5.4 meV). Both quenching and broadening of free-exciton PL peaks were observed for rms FIR field strengths above a threshold of order 100 V/cm.

© 1992 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.45.9428
DOI:
10.1103/PhysRevB.45.9428
PACS:
78.55.Cr, 73.20.Dx, 72.20.Ht
 
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