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APS » Journals » Phys. Rev. B » Volume 42 » Issue 5
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Phys. Rev. B 42, 3220–3223 (1990)

Interface-roughness-controlled exciton mobilities in GaAs/ Al0.37Ga0.63As quantum wells

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H. Hillmer and A. Forchel
IV Physikalisches Institut, Universität Stuttgart, D-7000 Stuttgart 80, Federal Republic of Germany

R. Sauer
Abteilung Halbleiterphysik, Universität Ulm, D-7900 Ulm, Federal Republic of Germany

C. W. Tu
AT&T Bell Laboratories, Murray Hill, New Jersey 07974-2070

Received 4 April 1990; published in the issue dated 15 August 1990

The influence of the interface morphology on exciton transport is studied by space- and time-resolved spectroscopy of GaAs/Al0.37Ga0.63As quantum wells grown continuously and with growth interruption. The growth-interrupted quantum wells exhibit smaller lifetimes than continuously grown structures due to nonradiative contributions to recombination. The exciton mobility, in contrast, is significantly higher in the growth-interrupted samples, reflecting a reduction of interface-roughness scattering.

© 1990 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.42.3220
DOI:
10.1103/PhysRevB.42.3220
PACS:
73.40.Kp, 73.50.Gr, 72.10.Fk, 73.20.Dx
 
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