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APS » Journals » Phys. Rev. B » Volume 41 » Issue 6
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Phys. Rev. B 41, 3761–3768 (1990)

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK

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Ning Wang, F. C. Wellstood, and B. Sadoulet
Department of Physics, University of California, Berkeley, California 94720
Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

E. E. Haller
Department of Material Science and Mineral Engineering, University of California, Berkeley, California 94720
Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

J. Beeman
Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720

Received 29 June 1989; published in the issue dated 15 February 1990

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

© 1990 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.41.3761
DOI:
10.1103/PhysRevB.41.3761
PACS:
63.20.Kr, 66.70.+f, 72.10.Di, 72.20.Ht
 
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