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Phys. Rev. B 40, 8075–8078 (1989)

Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures

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M. Dobers, J. P. Vieren, and Y. Guldner
Département de Physique de l’Ecole Normale Supérieure 24 rue Lhomond, F-75005 Paris, France

P. Bove, F. Omnes, and M. Razeghi
Thomson CSF Laboratoire Central de Recherches, Domaine de Corbeville, Bôte Postale 10, F-91401 Orsay, France

Received 8 June 1989; published in the issue dated 15 October 1989

The microwave-induced change of the magnetoresistivity of Ga0.47In0.53As-InP heterostructures reveals resonant structure which is attributed to electron-spin resonance of the two-dimensional conduction electrons. With microwave frequencies up to 480 GHz and in magnetic fields up to 12 T, we studied the spin splitting of the two lowest Landau levels in different samples. The spin splitting of these Landau levels is a quadratic function of the magnetic field and its extrapolation to zero magnetic field leads to vanishing spin splitting. The g factors depend on the magnetic field B and the Landau level N as follows: g(B,N)=g0-c(N+1/2)B, where g0 and c are sample-dependent parameters, which are of the order of g0≊4.1 and c≊0.08 T-1, in the studied heterostructures.

© 1989 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.40.8075
DOI:
10.1103/PhysRevB.40.8075
PACS:
76.30.Pk, 72.20.My, 72.80.Ey