Phys. Rev. B 39, 4828–4830 (1989)Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange
See accompanying Physics Focus The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel. The effect is much stronger than the usual anisotropic magnetoresistance and further increases in structures with more than two Fe layers. It can be explained in terms of spin-flip scattering of conduction electrons caused by the antiparallel alignment of the magnetization. © 1989 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.39.4828
DOI:
10.1103/PhysRevB.39.4828
PACS:
75.70.-i, 72.15.Gd
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.