Phys. Rev. B 38, 9870–9873 (1988)Theoretical calculation of band-edge discontinuities near a strained heterojunction: Application to (In,Ga)As/GaAsReceived 14 July 1988; published in the issue dated 15 November 1988 Energy-band lineups at [100] GaAs/(In,Ga)As heterojunctions are calculated using a self-consistent tight-binding treatment. We distinguish (i) the modification of bulk band structures due to strain, and (ii) a shift of one bulk structure with respect to the other, due to charge transfer across the interface. The main result is that, for a system strained to the GaAs lattice parameter, depending on the indium concentration, light and heavy holes can be localized either both in the same layer, or in the two different layers. Comparison with different experiments provides fairly good agreement. © 1988 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.38.9870
DOI:
10.1103/PhysRevB.38.9870
PACS:
73.20.Dx, 71.70.Ej, 61.55.Hg
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