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Phys. Rev. B 37, 941–955 (1988)

Nonequilibrium theory of the optical Stark effect and spectral hole burning in semiconductors

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S. Schmitt-Rink
AT&T Bell Laboratories, Murray Hill, New Jersey 07974-2070

D. S. Chemla
AT&T Bell Laboratories, Holmdel, New Jersey 07733

H. Haug
Institut für Theoretische Physik, Universität Frankfurt, Robert-Mayer-Strasse 8, D-6000 Frankfurt am Main, Federal Republic of Germany

Received 14 July 1987; published in the issue dated 15 January 1988

We consider the influence of intense coherent laser fields on the electronic and optical properties of semiconductors. Using nonequilibrium Green’s-function techniques and exploiting the analogies to superconducting and Bose-condensed systems, we discuss the nature of the renormalizations and the collective excitations in the collisionless regime. Experimentally, this situation can be realized (i) under nonresonant excitation of virtual electron-hole pairs and (ii) under resonant excitation with ultrashort pulses. We explain the recently observed optical Stark effect as well as spectral hole burning and derive from first principles the longitudinal and transverse dielectric functions including exciton correlations.

© 1988 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.37.941
DOI:
10.1103/PhysRevB.37.941
PACS:
71.70.Ej, 71.35.+z