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Phys. Rev. B 35, 9559–9568 (1987)

Stability and electronic properties of complex structures of silicon and carbon under pressure: Density-functional calculations

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R. Biswas
Microelectronics Research Center, Iowa State University, 1925 Scholl Road, Ames, Iowa 50011

Richard M. Martin
Xerox Corporation, Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

R. J. Needs
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB30HE, United Kingdom and Xerox Corporation, Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

O. H. Nielsen
Nordisk-Institut for Teoretisk Atomfysik (NORDITA), Blegdamsvej 17, DK-2100 Copenhagen, Denmark

Received 3 October 1986; published in the issue dated 15 June 1987

The structural and electronic properties of the complex tetrahedral structures B-8 (or ‘‘BC8,’’ bcc with 8 atoms per cell) and T-12 (or ‘‘ST12,’’ simple tetragonal with 12 atoms per cell) phases of silicon and carbon are computed with ab initio density-functional calculations of the energy, pressure, and enthalpy. For silicon, the B-8 and T-12 phases are found to be metastable, consistent with their formation during pressure reduction in high-pressure experiments. Energies of both structures are close to that of amorphous silicon. T-12 has an indirect gap larger than diamond-structure Si whereas B-8 is semimetallic. For carbon, the B-8 phase is found to be stable, relative to diamond and all previously calculated metallic phases, above pressures of 12 Mbar. This represents a new limit for the stability of diamond.

© 1987 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.35.9559
DOI:
10.1103/PhysRevB.35.9559
PACS:
64.70.Kb, 62.50.+p, 64.60.My, 71.25.Rk