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Phys. Rev. B 35, 6792–6795 (1987)

Interface roughening and domain growth in the dilute Ising model

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Debashish Chowdhury, Martin Grant, and J. D. Gunton
Temple University, Philadelphia, Pennsylvania 19122

Received 28 August 1986; published in the issue dated 1 May 1987

We have studied domain growth in the two-dimensional dilute Ising model following an instantaneous quench from a very high temperature to a temperature below the critical point. We have carried out Monte Carlo simulations of system sizes up to 6002 out to a maximum of 20 000 Monte Carlo steps per spin. We have interpreted the crossover from the curvature-driven regime to a new growth regime in the light of a phenomenological theory that describes the impurity roughening of the interface between the two phases.

© 1987 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.35.6792
DOI:
10.1103/PhysRevB.35.6792
PACS:
75.10.Hk, 05.50.+q, 75.70.Kw, 75.60.Ch