Phys. Rev. B 35, 4819–4822 (1987)Electrical resistivity of icosahedral Mg-Al-Zn alloysSee Also: Erratum Received 3 November 1986; published in the issue dated 1 April 1987 The temperature and magnetic field dependence of the electrical resistivity has been measured on single-phase icosahedral Mg32(Al1-xZnx)49 at x=0.5 and x=0.69. For temperatures between 4 and 20 K the observed behavior is found to agree quantitatively with the theories of quantum corrections to electron transport in disordered conductors. By fitting the magnetoresistance measurements to these theories, we can determine the resistivity in a way which is independent of the sample geometry, and we find that it shows a remarkably strong dependence on the alloy composition. © 1987 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.35.4819
DOI:
10.1103/PhysRevB.35.4819
PACS:
72.15.Cz, 72.15.Gd, 71.55.Jv
See AlsoErratum: David V. Baxter, R. Richter, and J. O. Strom-Olsen, Erratum: Electrical resistivity of icosahedral Mg-Al-Zn alloys, Phys. Rev. B 36, 7185 (1987). |
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