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Phys. Rev. B 31, 2069–2079 (1985)

Interband optical transitions in GaAs-Ga1-xAlxAs and InAs-GaSb superlattices

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Yia-Chung Chang
Department of Physics and Materials Research Laboratory, University of Illinois at UrbanaChampaign, 1110 West Green Street, Urbana, Illinois 61801

J. N. Schulman
Department of Physics and Astronomy, University of Hawaii at Manoa, Honolulu, Hawaii 96822

Received 2 July 1984; published in the issue dated 15 February 1985

Optical properties of GaAs-Ga1-xAlxAs and InAs-GaSb superlattices are studied within the framework of tight-binding approximation. The momentum matrix elements between tight-binding orbitals are related to those between Brillouin-zone-center Bloch states computed by a full-zone k→⋅p→ theory. The optical matrix elements of transitions from several valence subbands to several conduction subbands are calculated as functions of the well width and of the wave vector. It is found that the mixing of the heavy- and light-hole components in the superlattice states gives rise to a large variation in the optical matrix elements as k→ moves away from the zone center. The band mixing in conjunction with the exciton effect leads to weak structures in the absorption spectrum which can account for the forbidden transitions observed in several recent experiments.

© 1985 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.31.2069
DOI:
10.1103/PhysRevB.31.2069
PACS:
78.20.-e, 71.25.Tn, 71.10.+x