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Phys. Rev. B 30, 5390–5392 (1984)

Transition from β-tin to simple hexagonal silicon under pressure

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Richard J. Needs
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 and Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom

Richard M. Martin
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304

Received 5 June 1984; published in the issue dated 1 November 1984

Recently a simple hexagonal phase of Si has been discovered at ∼130-160 kbar of pressure. We have performed self-consistent density-functional calculations on the β-tin and simple hexagonal structures of Si, using the calculated stress tensor to determine the c/a ratios as a function of volume. We find the simple hexagonal phase to be stable at pressures above 143 kbar. As the two structures are simply related by small strains and displacements of the atoms, we calculate the total energy along a path between the transition structures showing that any barrier between them is lower than 0.01 eV per atom.

© 1984 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.30.5390
DOI:
10.1103/PhysRevB.30.5390
PACS: