Phys. Rev. B 30, 1929–1936 (1984)Theory of deep impurities in silicon-germanium alloysReceived 14 June 1982; revised 9 February 1984; published in the issue dated 15 August 1984 Calculations of the deep-energy levels of substitutional sp3-bonded defects in Six Ge1-x alloys suggest that the standard shallow dopants As and P and isoelectronic C defect may become deep traps for x≃0.2. © 1984 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.30.1929
DOI:
10.1103/PhysRevB.30.1929
PACS:
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