Phys. Rev. B 30, 7349–7351 (1984)Ballistic electrons in an inhomogeneous submicron structure: Thermal and contact effects
For a simple submicron semiconductor structure we have calculated exactly the electron distribution f(v,x) within a relaxation-to-local-equilibrium assumption for the collision term of the Boltzmann equation. This is the first calculation of the electron distribution in an inhomogeneous semiconductor. Large applied voltages produce a substantial ballistic peak in f(v,x). But at all voltages contact inhomogeneities and local heating (and cooling) produce an I-V characteristic only weakly dependent on the scattering rate. © 1984 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.30.7349
DOI:
10.1103/PhysRevB.30.7349
PACS:
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