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APS » Journals » Phys. Rev. B » Volume 28 » Issue 8
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Phys. Rev. B 28, 4579–4584 (1983)

Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors

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J. A. Sanjurjo*, E. López-Cruz†, P. Vogl‡, and M. Cardona
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany

Received 23 June 1983; published in the issue dated 15 October 1983

The mode Grüneisen parameters of the LO and TO Raman phonons of AlN, BN, and BP, and the dependence of eT* on lattice constant have been measured by Raman scattering in a diamond anvil cell. The results for eT* are interpreted by means of pseudopotential calculations of eT* versus lattice constant.

© 1983 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.28.4579
DOI:
10.1103/PhysRevB.28.4579
PACS:

*Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13100 Campinas, São Paulo, Brazil.

†Departamento de Física, Instituto de Ciencias, Universidad Autónoma de Puebla, Apartado J-48, CP-72570 Puebla, Pue, Mexico.

‡Institut für Theoretische Physik der Universität Graz, Universitätsplatz 5, A-8010 Graz, Austria.

 
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