Phys. Rev. B 27, 2545–2547 (1983)AsGa antisite defect in GaAsReceived 19 October 1982; published in the issue dated 15 February 1983 Calculations of the electronic states associated with the AsGa antisite defect in GaAs are carried out with the use of the self-consistent Green's-function technique. The defect is found to produce two deep donor levels separated by a U≈0.27 eV. The absolute positions of the levels are somewhat uncertain (∼0.2 eV) since they are affected by corrections necessary to improve on the GaAs gap values calculated by the local-density-functional method. The overall picture, however, supports a recent experimental assignment of the AsGa defect by Weber et al. © 1983 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.27.2545
DOI:
10.1103/PhysRevB.27.2545
PACS:
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