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Phys. Rev. B 25, 4075–4080 (1982)

Theory of donor electronic Raman scattering in wurtzite-type semiconductors

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Nguyen Ba An, Nguyen van Hieu, Nguyen Toan Thang, and Nguyen Ai Viet
Institute of Physics, Nghia Do, Tu Liem, Hanoi, Vietnam

Received 5 February 1981; published in the issue dated 15 March 1982

A theory is presented for the electronic Raman scattering on donor levels in semiconductors with the wurtzite structure. The analytical expressions of the scattering cross section with different photon polarization configurations are derived in the second order of the perturbation theory. A comparison with the experiment is done for CdS.

© 1982 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.25.4075
DOI:
10.1103/PhysRevB.25.4075
PACS: