Phys. Rev. B 23, 5634–5637 (1981)Effect of hydrogen on the density of gap states in reactively sputtered amorphous silicon
The density of states near midgap and the hydrogen content have been measured on a number of reactively sputtered a-SiHx films prepared at different hydrogen partial pressures. The density of states near midgap is observed to decrease exponentially with increasing hydrogen partial pressure to less than 1015 states cm-3 eV-1. The data are interpreted in terms of a simple kinetic model of the H incorporation in the a-Si network. © 1981 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.23.5634
DOI:
10.1103/PhysRevB.23.5634
PACS:
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