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Phys. Rev. B 22, 2132–2134 (1980)

Indirect exchange interactions in zero-gap semiconductors: Anisotropic effects

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C. Lewiner*
Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris 7, Tour 23, 2 Place Jussieu, 75221 Paris Cedex 05, France

G. Bastard*
Groupe de Physique des Solides de l'Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

Received 13 November 1979; published in the issue dated 15 August 1980

In zero-gap Hg1-xMnx Te alloys, the existence of spin-orbit coupling in the intermediate states leads to anisotropic indirect exchange interactions between localized spins. These effects are evaluated and are shown to reduce the Curie-Weiss temperature previously calculated.

© 1980 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.22.2132
DOI:
10.1103/PhysRevB.22.2132
PACS:

*Laboratoire associé au Centre National de la Recherche Scientifique.

See Also

Original Article: G. Bastard and C. Lewiner, Indirect-exchange interactions in zero-gap semiconductors, Phys. Rev. B 20, 4256 (1979).