Phys. Rev. B 20, 4256–4267 (1979)Indirect-exchange interactions in zero-gap semiconductorsReceived 16 October 1978; revised 27 March 1979; published in the issue dated 15 November 1979 The indirect-exchange interaction between two localized magnetic moments is calculated in zero-gap semiconductors. The virtual interband transitions between the valence and conduction bands give rise to an indirect-exchange mechanism which is ferromagnetic if the band degeneracy is accidental. If, however, the band degeneracy is symmetry induced, the indirect interaction is antiferromagnetic. A discussion of the magnetic susceptibility of zero-gap Hg1-xMnxTe alloys is given. © 1979 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.20.4256
DOI:
10.1103/PhysRevB.20.4256
PACS:
See AlsoComment: C. Lewiner and G. Bastard, Indirect exchange interactions in zero-gap semiconductors: Anisotropic effects, Phys. Rev. B 22, 2132 (1980). |
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