Phys. Rev. B 19, 2928–2932 (1979)Double-dangling-bond defects and band bending at the GaAs (110) surfaceReceived 25 August 1978; published in the issue dated 15 March 1979 We note that contact-potential measurements which have shown band bending at the nonpolar GaAs surface can be interpreted with a simple model for cleavage defects at the surface. We find that defects with two dangling bonds at the surface produce both filled and empty defect states in the gap. This result then supports experimental work indicating that band bending at GaAs(110) is defect related. © 1979 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.19.2928
DOI:
10.1103/PhysRevB.19.2928
PACS:
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