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APS » Journals » Phys. Rev. B » Volume 15 » Issue 8
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Phys. Rev. B 15, 4103–4104 (1977)

Structure at 0.8 eV in metal-insulator-metal tunneling junctions

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R. C. Jaklevic and John Lambe
Research Staff, Ford Motor Company, Dearborn, Michigan 48121

John Kirtley*,† and P. K. Hansma*,‡
Department of Physics, University of California, Santa Barbara, California 93106

Received 27 December 1976; published in the issue dated 15 April 1977

We describe structure at 0.8 eV in thick-film metal-insulator-lead junctions that is related to the quantum size effect oscillations previously observed in junctions with lead ≅ 100 A thick. We discuss how this structure can be distinguished from structure due to molecular electronic transitions.

© 1977 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.15.4103
DOI:
10.1103/PhysRevB.15.4103
PACS:

*Work supported by the NSF.

†Present address: Dept. of Physics and Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pa. 19174.

‡Supported in part by the Alfred P. Sloan Foundation.

 
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