Phys. Rev. B 10, 5075–5081 (1974)Intrinsic surface states of (110) surfaces of group IV and III-V semiconductorsReceived 25 July 1974; published in the issue dated 15 December 1974 Electronic local and total density of states calculations have been performed using tight binding models on the (110) surface of a group IV and III-V semiconductor. Ge and GaAs are taken as prototypes and the surface is assumed to be unrelaxed. Several new surface states are obtained near the bottom of the valence bands. The origin, localization, and character of the surface states are examined. © 1974 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.10.5075
DOI:
10.1103/PhysRevB.10.5075
PACS:
See AlsoComment: James R. Chelikowsky, Steven G. Louie, and Marvin L. Cohen, Relaxation effects on the (110) surface of GaAs, Phys. Rev. B 14, 4724 (1976). |
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